Spin-polarized tunneling of La0.67Sr0.33MnO3/YBa2Cu3O7−δ junctions

Spin-polarized tunneling of La0.67Sr0.33MnO3/YBa2Cu3O7−δ junctions

Spin-polarized resonant tunneling in magnetic tunnel junctions.

Insertion of a thin nonmagnetic copper Cu(001) layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the Cu layer thickness. The effect is interpreted in terms of the formation of spin-polarized resonant tunneling. The amplitude of the oscillation is so large that even...

Spin tunneling in junctions with disordered ferromagnets.

We provide compelling evidence to establish that, contrary to one's elementary guess, the tunneling spin polarization (TSP) of amorphous CoFeB is larger than that of fcc CoFeB. First-principles atomic and electronic structure calculations reveal striking agreement between the measured TSP and the predicted s-electron spin polarization. Given the disordered structure of the ternary alloy, not on...

Spin-dependent tunneling in magnetic tunnel junctions

The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunneling in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunneling magnetoresistance (TMR)...

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy.

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